SSD SAMSUNG 970 EVO PLUS 1TB NVMe M.2
S’ka stok
Form Factor M.2 (2280)
Interface PCIe Gen 3.0 x4, NVMe 1.3
Capacity 250GB 500GB 1TB
Controller Samsung Phoenix Controller
NAND Samsung V-NAND 3bit MLC
DRAM Cache Memory 512MB LPDDR4 512MB LPDDR4 1GB LPDDR4
Performance
Sequential Read 3500 MB/s
Sequential Write 2300 MB/s 3200 MB/s 3300 MB/s
Random Read (QD 32 Thread 4) 250K IOPS 460K IOPS 600K IOPS
Random Write (QD 32 Thread 4) 550K IOPS
Power Consumption
Idle (ASPT on) 30 mW
Active (Avg.) Read 5W 5.5W 5.5W
Active (Avg.) Write 4.2W 5.8W 6.0W
L1.2 mode 5 mW
18,500 L
S’ka stok
| Peshë | 1 g/kg |
|---|
Produkte të afërt
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- M.2 2280 Form Factor
- PCIe 4.0 x4 Interface
- Up to 6000 MB/s Sequential Read Speed
- Up to 5000 MB/s Sequential Write Speed
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- 2 Million Hour MTBF
- Endurance (TBW): 640TB
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- M.2 2280 Form Factor
- PCIe 5.0 x4 / NVMe 2.0 Interface
- Sequential Reads up to 14,700 MB/s
- Sequential Writes up to 13,300 MB/s
- 1GB LPDDR4x Cache Memory
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- Samsung V-NAND TLC Flash Technology
- Samsung In-House Controller
- AES 256-Bit Encryption
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Komponente PC, SSD
SSD 1TB NVME SAMSUNG 990 EVO PLUS
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• The 990 EVO Plus brings boosted sequential read/write speeds up to 7,250/6,300MB/s.¹
• Harness the full power of your drive with the enhanced large-file performance of Intelligent TurboWrite 2.0—now available in 4TB capacity.
• Keep your cool as you work—or play—with no worries about overheating or battery life, thanks to an efficiency-boosting nickel-coated controller.
• Optimized to support the latest technology for SSDs—990 EVO Plus is compatible with PCIe 4.0 x4 and PCIe 5.0 x2.
• It’s not hocus-pocus. Your 990 EVO Plus SSD performs like new with the always up-to-date Magician Software.
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- 2TB Storage Capacity
- 2.5″ Form Factor
- SATA III 6 Gb/s Interface
- 2GB LPDDR4 Cache
- Up to 560 MB/s Sequential Read Speed
- Up to 530 MB/s Sequential Write Speed
- Samsung MKX Controller
- MLC V-NAND Technology
- MTBF Rating: 1.5 Million Hours
- Endurance up to 1200TB
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- 512GB Storage Capacity
- M.2 2280 Form Factor
- PCIe Gen 3 x4 Interface
- Read Speeds up to 3300 MB/s
- Write Speeds up to 2400 MB/s
- Shock & Vibration Resistance
- 3D TLC NAND Technology
- Low-Density Parity Check (LDPC) ECC
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- 1.5 Million Hours MTBF
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- M.2 2280 Form Factor
- PCIe 4.0 x4 / NVMe 2.0 Interface
- Sequential Reads up to 7450 MB/s
- Sequential Writes up to 6900 MB/s
- Up to 1200TB TBW (Total Bytes Written)
- Samsung V-NAND Flash Technology
- AES 256-Bit Encryption
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- 2TB Storage Capacity
- M.2 2280 Form Factor
- PCIe 5.0 x2 / 4.0 x4 Interface
- Host Memory Buffer (HMB) Cache
- Sequential Reads up to 7250 MB/s
- Sequential Writes up to 6300 MB/s
- Samsung In-House Controller
- Samsung V NAND TLC NAND (V8)
- Endurance (TBW): 1200TB
- AES 256-Bit Data Encryption
SKU: n/a
